CEO Andy Hsu will introduce
NEO Semiconductor's 3D X-AI™, a game-changing 3D memory with AI
processing that combines data storage and data processing in a
single chip, accelerating neural performance by 100X and reducing
power consumption by 99%
SAN
JOSE, Calif., July 17,
2024 /PRNewswire/ -- NEO Semiconductor, a
leading developer of innovative technologies for 3D NAND flash and
DRAM memory, today announced its participation at FMS 2024: the
Future of Memory and Storage, taking place in person in
Santa Clara, California, on
August 6-8. CEO, Andy Hsu, will deliver a keynote address titled
"New 3D AI Chip Technology Accelerates Generative AI" on
August 6th at 11:45 a.m. Pacific Time.
Based on NEO's award-winning 3D X-DRAM™ technology, 3D X-AI
simulates artificial neural networks (ANNs), including synapses for
weight data storage and neurons for data processing, making it
ideally suited to accelerate next-generation AI chips and
applications. 3D X-AI substitutes for high-bandwidth memory (HBM)
and is expected to significantly evolve AI chip design and AI
workload optimization. A single 3D X-AI die includes 300 layers of
3D memory with 128 Gb (gigabit) capacity and 1 layer of neural
circuitry with 8,000 neurons supporting up to 10 TB/s (terabytes
per second) of AI processing throughput per die. Using twelve 3D
X-AI dies stacked with HBM packaging can scale 3D X-AI chip
capacity and performance by 12X to reach 1,536 Gb (192 GB) capacity
and 120 TB/s processing throughput with a single 3D X-AI
chip.
"Typical AI chips use processor-based neural networks. This
involves combining high-bandwidth memory to simulate synapses for
storing weight data and graphical processing units (GPUs) to
simulate neurons for performing mathematical calculations.
Performance is limited by the data transfer between HBM
and GPU, with back-and-forth data transfer lowering AI
chip performance and increasing power consumption," said
Andy Hsu, Founder & CEO of
NEO Semiconductor. "AI chips with 3D X-AI use memory-based
neural networks. These chips possess neural network functions with
synapses and neurons in each 3D X-AI chip. They are used to
drastically reduce the heavy workload of data transfer data
between GPU and HBM when performing AI operations. Our
invention drastically improves AI chip performance and
sustainability".
FMS: the Future of Memory and Storage is an all-inclusive
international memory and storage showcase.
NEO Semiconductor is going to showcase its technologies in booth
number 507. To schedule a meeting with NEO Semiconductor at FMS,
please contact: mayalustig@neosemic.com.
About NEO Semiconductor
NEO Semiconductor is a high-tech company focused on advancing 3D
NAND flash, 3D DRAM, and 3D AI technologies. The company was
founded in 2012 by Andy Hsu and a
team in San Jose, California, and
owns more than 25 U.S. patents. In 2020, the company made a
breakthrough in 3D NAND architecture named X-NAND™ that can
achieve SLC performance from TLC and QLC memory to provide
high-speed, low-cost solutions for many applications, including 5G
and AI. In 2022, the company launched its X-DRAM™
technology, representing a new architecture that can deliver DRAM
with the world's lowest power consumption. In 2023, NEO launched
its ground-breaking 3D X-DRAM™ technology, a game changer in
the memory industry, enabling the world's first 3D NAND-like DRAM
to solve capacity scaling bottlenecks and move the market past the
limitations of 2D DRAM. In 2024, 3D X-AI™ technology
was unveiled to pioneer AI neural networks in 3D memory to
revolutionize the performance, power consumption, and cost of AI
Chips. For more information, visit https://neosemic.com/.
Media and Analyst Contact:
Maya Lustig
mayalustig@neosemic.com
Logo - https://mma.prnewswire.com/media/2462541/Neo_Logo.jpg
View original content to download
multimedia:https://www.prnewswire.com/news-releases/neo-semiconductor-to-present-its-3d-x-ai-game-changing-3d-memory-with-ai-processing-in-keynote-address-at-fms-2024-the-future-of-memory-and-storage-302199314.html
SOURCE NEO Semiconductor