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Share Name | Share Symbol | Market | Type | Share ISIN | Share Description |
---|---|---|---|---|---|
Iqe Plc | LSE:IQE | London | Ordinary Share | GB0009619924 | ORD 1P |
Price Change | % Change | Share Price | Bid Price | Offer Price | High Price | Low Price | Open Price | Shares Traded | Last Trade | |
---|---|---|---|---|---|---|---|---|---|---|
1.10 | 4.01% | 28.50 | 28.50 | 28.60 | 28.80 | 27.05 | 27.05 | 745,320 | 10:38:06 |
Industry Sector | Turnover | Profit | EPS - Basic | PE Ratio | Market Cap |
---|---|---|---|---|---|
Electronic Components, Nec | 167.49M | -74.54M | -0.0775 | -3.70 | 275.47M |
Date | Subject | Author | Discuss |
---|---|---|---|
24/3/2017 09:22 | LW425 - Read the Annual Report in FULL it is all explained. | adventurous | |
24/3/2017 09:22 | 75% of my iqe shares are already in my ISA. | poombear | |
24/3/2017 09:21 | Sweenoid I am approaching a crunch point for CGT gains, and the need in a couple of weeks of moving shares or funds into my ISA. Nice problems I admit. | poombear | |
24/3/2017 09:18 | No complaints here! | monty panesar | |
24/3/2017 09:14 | LW425, you are obviously reading the results, it's does explain the additional Capex spending for Photonics equipment and Creo development. | poombear | |
24/3/2017 09:12 | FWIW Have now raised my MINIMUM PRICE TO sell a single share from 65p to 75p, chart shows we have clear skies to 65p , if it could break that point and retain sentiment and momentum then anything is possible, it would appear that the roadshows presentations post results have been successful and persuasive :-) I have been correct in ALL my targets from 16p , make of that what you will ;-) Repeat after me please just because something cheap doubles in price does not make it expensive, just less cheap! just because something cheap doubles in price does not make it expensive, just less cheap just because something cheap doubles in price does not make it expensive, just less cheap Was saying that at 16p, 20p, 26p etc etc No more from me til next week, time for a long walk S | sweenoid | |
24/3/2017 09:11 | "Anyone still think this share price is going up in a straight line?" I asked much the same thing in my recent post 1569. And re "this is getting silly now" - of course this rapid rise has got to stop very soon, but if you take a longish term view, the share price is still very far from 'silly', imo. | aimingupward2 | |
24/3/2017 09:06 | "Net debt increased by £16.3m from £23.2m to £39.5m, although c.£7m of this increase represents a presentational foreign currency impact." so ignoring the 7m. net debt rose by about 9m. | lw425 | |
24/3/2017 09:06 | Chart still saying the same. | horneblower | |
24/3/2017 09:04 | This is getting silly now | shanieboy01 | |
24/3/2017 08:51 | LW425, there is no deferred consideration left anymore. The debt movement was presentational due to the currency impact of the post-Brexit swing in the pound AFAIK. | rivaldo | |
24/3/2017 08:49 | Swapped one for the other, cap ex was higher and used debt. | big7ime | |
24/3/2017 08:48 | Cash and cash equivalents at 31 December of 4.957m compared to 4.464m a year previously. But they apparently made Net cash generated from operating activities 20.135m. Whenever I look at the account it always seems to be the same. Honestly nothing appears to have changed since 18p. Yump. any comments? | lw425 | |
24/3/2017 08:43 | anyone know why the NET DEBT + DEFERRED CONSIDERATION rose from 35.4m end June to 39.5m end Dec? | lw425 | |
24/3/2017 08:39 | IQE has a lot of extremely promising IP and a respectable profit history for a company whose Market cap is still under £400M. It potentially makes the company a very tasty target for a larger player in the same business. That, I believe, is why the share price recovered so strongly after the results. I suspect someone is building a stake. Excepting the post results dip, the upward progression is simply too linear for it to be the result of optimistic PI's. It could be an institution building an investment stake but IMO a company with a take-over in mind is more likely. I hope I am wrong, having believed in the company for a long time initially buying at sub 10p (2009 since you ask), it would be a shame to see it taken out just as it is reaching the sweet spot in the investment / return cycle. On the other hand a takeover could well be around the £1 mark for a dramatic short term profit since, say, November 16. | monty9 | |
24/3/2017 08:37 | Hopefully they will upgrade again , been waiting for a chance to buy in here for a while and got some on that pullback on results day , will continue to add on any weakness (if there is any lol) | d1nga | |
24/3/2017 08:29 | Wow, glad I didn't sell the lot. This has turned from Dog to Darling. Brokers tgt nearly reached in two days, gulp what next.. | big7ime | |
24/3/2017 08:26 | Anyone still think this share price is going up in a straight line? | alexisk | |
24/3/2017 08:17 | I was referring to the diagram in Rivaldos post :-) | poombear | |
24/3/2017 08:14 | "Looks like we've just scratched the surface" Of what? Oh the share price...;) | richardc77 | |
24/3/2017 08:02 | Looks like we have just scratched the surface. There is a link to the full report at the bottom of this article, but it would not load for me. | poombear | |
24/3/2017 07:20 | News of IQE's work on GaN in tandem with Qorvo and Cornell - sounds great, translations into English welcome! From the first link: "22 March 2017 Gallium nitride vertical junction barrier Schottky diodes Cornell University, Qorvo Inc and IQE RF LLC in the USA have reported on work on vertical junction barrier Schottky diodes (JBSDs) produced on free-standing gallium nitride (GaN) [Wenshen Li, et al, IEEE Transactions on Electron Devices, published online 21 February 2017]. The aim was to combine the good characteristics of Schottky barrier diodes and pn diodes (PNDs) for power applications. etc" And from the second: "I. Introduction GaN holds great promises as a strong material for power electronics due to its superior Baliga’s figure-of-merit ( BV 2 /R ON ) than SiC and Si. High power and high speed GaN lateral devices taking advantages of the high mobility 2-D electron gas in AlGaN/GaN heterostructure have seen rapid advancement in the past two decades [1]–[3], without the need for high quality bulk substrate. With the availability of low-dislocation-dens | rivaldo |
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