Freescale Achieves Breakthrough in Cost-Effective Plastic Packaging for High-Power RF Transistors

   RF Devices in Over-Molded Plastic Package Designed to Perform on
    Par with Air-Cavity Package at 2 GHz, Reduce Amplifier Cost and
                     Streamline Automated Assembly

   Freescale Semiconductor (NYSE:FSL) (NYSE:FSL.B) today has
introduced the industry's first 2 GHz high-power RF transistors housed
in over-molded plastic packages that deliver performance comparable to
air-cavity flange packages. The advanced devices will be based on the
company's high-voltage, seventh-generation (HV7) RF Laterally Diffused
Metal Oxide Semiconductor (LDMOS) technology. This advanced RF
technology is designed to give designers of cellular infrastructure
the ability to significantly reduce the cost of base station
amplifiers, which are the most expensive elements of wireless systems,
while maintaining the stringent performance requirements.
   Freescale's flagship HV7 device is the MRF7S19120N available in a
TO-270 WBL-4 package. The MRF7S19120N delivers a minimum of 120 W P1dB
and 36 W average with typical performance anticipated to be 18 dB
gain, 32 percent efficiency and -37.5 dBc linearity at PAR=6.1dB
(tested with single-carrier W-CDMA signal with PAR=7.5dB @ 0.01
percent probability on CCDF). A corresponding family of 2.1GHz
products is planned to be released in Q3 2006.
   The MRF7S19120N is the first transistor to deliver comparable
performance at 1.9 GHz with a minimum output power of 120 W CW. When
compared to its air-cavity counterparts, the achieved performance is
equivalent in every electrical parameter.
   Ceramic air-cavity packages have been used exclusively for decades
to house high-power RF power transistors. They are inherently able to
withstand and dissipate the high heat levels generated by the
transistor, and they do not significantly degrade performance over
that of the bare transistor die.
   "Freescale is committed to complementing our air-cavity-packaged
devices with cost-effective over-molded plastic models that deliver
exceptional performance," said Gavin Woods, vice president and general
manager of Freescale's RF Division. "Over-molded plastic-packaged
devices can be much less expensive on a per unit basis than comparable
devices in air-cavity packages, which provides a significant cost
benefit to amplifier manufacturers. In addition, over-molded plastic
devices simplify our customer's manufacturing process by enabling a
more efficient automated assembly, which can contribute additional
cost savings."
   Freescale has manufactured over-molded plastic-packaged RF devices
with parity performance up to 1 GHz for many years. However, achieving
2 GHz performance in over-molded plastic-packages identical to that of
air-cavity packages requires complex design techniques and extensive
work to overcome technology and materials limitations.

   Pricing and Availability

   Samples of Freescale's MRF7S19120N are available now, and full
production is expected to begin in Q4 2006.
   For further information on Freescale's HV7 LDMOS technology,
over-molded plastic packaging and the advanced RF devices, visit
www.freescale.com/rf.

   About Freescale Semiconductor

   Freescale Semiconductor, Inc. (NYSE:FSL) (NYSE:FSL.B) is a global
leader in the design and manufacture of embedded semiconductors for
the automotive, consumer, industrial, networking and wireless markets.
Freescale became a publicly traded company in July 2004 after more
than 50 years as part of Motorola, Inc. The company is based in
Austin, Texas, and has design, research and development, manufacturing
or sales operations in more than 30 countries. Freescale, a member of
the S&P 500(R), is one of the world's largest semiconductor companies
with 2005 sales of $5.8 billion (USD).

   www.freescale.com

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2006.