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ATMI Atmi Inc. (MM)

33.98
0.00 (0.00%)
After Hours
Last Updated: 01:00:00
Delayed by 15 minutes
Share Name Share Symbol Market Type
Atmi Inc. (MM) NASDAQ:ATMI NASDAQ Common Stock
  Price Change % Change Share Price Bid Price Offer Price High Price Low Price Open Price Shares Traded Last Trade
  0.00 0.00% 33.98 0 01:00:00

Cree, Inc. to Acquire Gallium Nitride Substrate and Epitaxy Business from ATMI, Inc.

25/03/2004 1:05pm

PR Newswire (US)


Atmi Inc. (MM) (NASDAQ:ATMI)
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Cree, Inc. to Acquire Gallium Nitride Substrate and Epitaxy Business from ATMI, Inc. DURHAM, N.C., March 25 /PRNewswire-FirstCall/ -- Cree, Inc. today announced that it has entered into a definitive agreement to acquire the gallium nitride (GaN) substrate and epitaxy business of Advanced Technology Materials, Inc., a wholly-owned subsidiary of ATMI, Inc. , through an asset purchase transaction. Under the terms of the agreement, Cree will purchase the assets of the business, including related intellectual property, fixed assets and inventory, in exchange for cash. The parties anticipate that the acquisition, which is subject to certain third party approvals and other customary conditions, will close during the fourth quarter of Cree's fiscal year ending in June. The acquisition will be accounted for under the purchase method of accounting with no resulting goodwill. The transaction is not expected to have a material effect on Cree's earnings per share. Chuck Swoboda, CEO and President of Cree, stated, "We believe ATMI's GaN substrate and epitaxy capability will complement Cree's existing silicon carbide and GaN materials business. In addition, this acquisition provides Cree with fundamental IP related to GaN substrates and epitaxy technology which is synergistic with our existing patent portfolio in the optoelectronic, materials and microwave areas." Dr. Calvin Carter, Cree's Director of Materials Technology, added, "We are pleased to enter into this agreement with ATMI. They are awell respected and recognized industry leader in GaN materials. We intend to continue to service existing ATMI GaN customers and believe our own use of GaN substrates could provide performance enhancements for our future products." Cree is an advanced semiconductor company that leverages its expertise in silicon carbide (SiC), gallium nitride (GaN) and silicon (Si) materials technology to produce new and enabling semiconductors. The products include blue, green and near ultraviolet (UV) light emitting diodes (LEDs), near UV lasers, radio frequency (RF) and microwave devices, and power switching devices. Targeted applications for these products include solid state illumination, optical storage, wireless infrastructure and power switching. For more information on Cree, please visit our web site at http://www.cree.com/ . This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risks that the acquisition may not be completed as scheduled, the acquired operations may not achieve the results expected, we may have difficulties retaining existing customers of the acquired operations, the costs and challenges of integrating the acquired operations with our other businesses may be greater than expected and other factors discussed in Cree's report on Form 10-K for the year ended June 29, 2003and subsequent reports filed with the Securities and Exchange Commission. DATASOURCE: Cree, Inc. CONTACT: Fran Barsky, Investor Relations Manager of Cree, Inc., +1-919-313-5397, or fax, +1-919-313-5615, or Web site: http://www.cree.com/

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